Thermo-voltage measurements of atomic contacts at low temperature
نویسندگان
چکیده
We report the development of a novel method to determine the thermopower of atomic-sized gold contacts at low temperature. For these measurements a mechanically controllable break junction (MCBJ) system is used and a laser source generates a temperature difference of a few kelvins across the junction to create a thermo-voltage. Since the temperature difference enters directly into the Seebeck coefficient S = -ΔV/ΔT, the determination of the temperature plays an important role. We present a method for the determination of the temperature difference using a combination of a finite element simulation, which reveals the temperature distribution of the sample, and the measurement of the resistance change due to laser heating of sensor leads on both sides next to the junction. Our results for the measured thermopower are in agreement with recent reports in the literature.
منابع مشابه
Switchable wiring for high-resolution electronic measurements at very low temperatures.
Low-temperature transport measurements with high energy resolution require effective filtering of high-frequency input. The high dc resistance of standard RC filters results in considerable heat input and hampers measurements with high currents or voltages. We developed a wiring scheme that incorporates a commercial latching relay at very low temperature between two sets of wires. In our applic...
متن کاملInvestigation of post-annealing effect on efficient ohmic contact to ZnO thin film using Ti/Al metallization strategy
Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...
متن کاملMagnetotransport in atomic-size bismuth contacts.
We report low-temperature transport experiments on atomic-size contacts of bismuth that are fabricated using the mechanically controlled break-junction technique at low temperatures. We observe stable contacts with conductance values at fractions of one conductance quantum G0 = 2e(2)/h, as is expected for systems with long Fermi wavelength. We defer two preferred conductance scales: the lower o...
متن کاملComparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements
We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placemen...
متن کاملWriting and Low-Temperature Characterization of Oxide Nanostructures
Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions. Oxide interfaces exhibit a wide range of properties that can be controlled include conduction, piezoelectric behavior, ferromagnetism, superconductivity and nonlinear optical properties. Recently, methods for controlling these properties at extreme nanos...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره 7 شماره
صفحات -
تاریخ انتشار 2016